Gate Driver Boards
Gate Driver Modules for IGBTs, MOSFETs and SiC FETs
Gate Driver Boards are complex blocks that interface power switches with the controller. In other words, their basic function is to provide isolation between high voltage circuit and low voltage controller. Furthermore, they also level shift drivers output to source/emitter ground in high side applications. In addition, each type of power switch requires different levels of output voltage and current and are exposed to application-specific risks such as high dv/dt and short circuit conditions.
There is also a low propagation delay requirement for high frequency switching that vary depending on the topology of the circuit and the switch being used. So, all available gate driver boards provide adequate features and functionality that cover most applications and devices such as IGBTs, MOSFETs, and Silicon Carbide (SiC) FETs. In conclusion, these gate driver boards are equipped to help you drive your switching circuit with ease and flexibility in all power switching applications.
How to Select a Suitable Gate Driver for Your Application?
|GDC||SiC FETs, MOSFETs||110 ns P.D., 100 kV/us CMTI||50 kHz||Yes, SiC/MOSFET Optimised|
|GDA||IGBTs||150 ns P.D., 35 kV/us CMTI||50 kHz||Yes, IGBT Optimised|
|GDX||IGBTs, SiC FETs, MOSFETs||30 ns P.D., 100 kV/us CMTI||3 MHz||No|
GDC Carbide Series
SiC Gate Driver Boards with Advanced Protection
GDC Series include high performance fully isolated SiC/IGBT/MOSFET gate driver modules for 2, 4 and 6 Switches. Therefore, making them suitable for helping you prototype multi-phase inverters during your research and educational projects. These drives use Texas Instrument’s ISO5852 smart and high-performance gate driver IC, and feature’s dead time generation logic, fault latch logic, input and output indication LEDs, test points and built in 5 V regulator which could be used to power up external control circuitry.
The most notable feature of these modules is that they identify short circuit condition using desaturation detection. Consequently, it safely turns off the switch and gives the controller an isolated fault feedback signal. This series also has a very high common mode immunity of 100 kV/us. In other words, it utilizes the high switching speed of SiC FETs to its fullest. This product can be ordered with different output voltages suitable for different available SiC FETs in the mark, that are, +20/-5, +18/0, +15/0, +15/-5 & +15/-15.
GDA Advanced Series
IGBT Gate Driver Boards with Advanced Protection
GDA Series including high performance fully isolated IGBT/MOSFET gate driver modules with advanced protection features that are available in 2, 4 & 6 channel configurations. Hence, providing enough modularity & making them suitable for helping you prototype multi-phase inverters during your research and educational projects.
The gate driver boards use smart gate driver IC which, firstly, detects short circuit condition using desaturation detection and, consequently, turns off the switch & outputs fault feedback signal. In addition, you can enable fault latch circuitry which automatically shuts down the module and does not resume operation till power reset occurs. Other features include dead time generation logic, input and output indication LEDs, test points and built in 5V regulator which could be used to power up external control circuitry.
GDX Xtreme Series
Our Most Versatile High Speed Gate Driver Modules for SiC, MOSFET and IGBTs
GDX series are high performance fully isolated SiC/IGBT/MOSFET gate driver modules for 2, 4 and 6 Switches, therefore, making them suitable for helping you prototype multi-phase inverters during your research and educational projects. The drives use Texas Instrument’s UCC21520 high-performance gate driver IC, and feature’s dead time generation logic, input and output indication LEDs, test points and built-in 5V regulator which could be used to power up external control circuitry.
Most notable feature of this module is its ultra-low propagation delay of less than 30ns. Hence, enabling them to help you in high switching frequency applications such as ZVS and ZCS topologies and making them ideal for cascaded and parallel topologies to minimize differences between switches. Overall, this module will achieve the fastest gate drive operation and the lowest output signal distortion helping you out in high frequency switching applications.
Due to very high switching speeds of SiC FETs, high immunity is required for proper operation of the gate driver module. Hence, GDX series has a very high common-mode immunity of 100 kV/us to help you get the best out of your SiC switching circuit. This product can be ordered with different output voltages suitable for different available SiC FETs in the market. Available options are +20/-5, +18/0, +15/0, +15/-5 & +15/-15.
Selecting the right value of the external gate resistance is essential in limiting the noise and energy loses in the switching operation and it’s selection may vary depending on the transistor being used. The data sheet of the transistor IC shows recorded test values of operation under optimal condition which also includes the value of external gate resistance (RGATE) which enables switching while minimizing turn on (Eon) and turn off (EOFF) loses.
The optimal value of gate driver output voltage depends on the switch being used. Usually SiC FETs come in multiple recommended voltages such as +20/-5V, +18/0V and +15/-5V. You can find more information in Absolute Maximum Ratings table in switch datasheet.
SiC gate drivers have higher common mode rejection and low propagation delay as compared to IGBT gate drivers, making them suitable for higher speed applications while, at the same time, having all the advanced protection features.
Each output channel of the gate driver board has a male plug connector which can be directly connected to the gate-source/emitter terminal with the selected gate resistance to provide with the required gate voltage for the switching operation.